1999. 11. 30 1/3 semiconductor technical data MPS751 epitaxial planar pnp transistor revision no : 2 voltage regulator, relay, lamp driver, industrial use features high voltage : v ceo =-60v(min.). high current : i c (max.)=-1a. high transition frequency : f t =150mhz(typ.). wide area of safe operation. complementary to mps651. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-50v, i e =0 - - -100 na emitter cut-off current i ebo v eb =-4v, i c =0 - - -100 na dc current gain h fe (1) v ce =-2v, i c =-50ma 60 - 200 h fe (2) v ce =-2v, i c =-1a 30 - - collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 60 - - v collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - -0.2 -0.7 v base-emitter saturation voltage v be(sat) i c =-500ma, i b =-50ma - -0.85 -1.2 v transition frequency f t v ce =-10v, i c =-50ma - 150 - mhz collector output capacitanc c ob v cb =-10v, i e =0, f=1mhz - 12 - pf characteristic symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v collector current dc i c -1 a pulse i cp -2 collector power dissipation p c 625 mw junction temperature t j 150 storage temperature range t stg -55 150 note : h fe (1) classification 0:60 120 , y:100 200
1999. 11. 30 2/3 MPS751 revision no : 2
1999. 11. 30 3/3 MPS751 revision no : 2
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